The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2002
Filed:
Dec. 01, 1999
Rex Watton, Malvern, GB;
Cyril Hilsum, Pinner, GB;
Qinetiq Limited, London, GB;
Abstract
A thermal detector device comprising an array of thermal detector elements, an array of microbridge structures comprising the array of thermal detector elements, readout silicon integrated circuitry (ROIC) and an interconnect layer on which the array of microbridge structures are arranged. The interconnect layer comprises a plurality of conducting interconnect channels providing an electrical connection between the microbridge structures and input contacts on the ROIC such that the microbridge structures are in electrical contact with, but are separated from, the readout silicon integrated circuitry. As the interconnect layer separates the microbridge structures from the ROIC, the detector material, typically a ferroelectric material, may be fabricated on the microbridge structures at a deposition or anneal temperature which is not limited by the avoidance of damage to the ROIC. Deposition temperatures of at least 500° C. or, preferably, at higher temperatures e.g. 700° C.-900° C., may therefore be used, enabling the fabrication of high performance ferroelectric or microbolometer thermal detector arrays. The invention also relates to a method of fabricating high performance thermal detector arrays comprising an interconnect layer.