The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2002
Filed:
Sep. 19, 2000
Applicant:
Inventor:
John C. Foster, Mountain View, CA (US);
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/144 ; H01L 2/1336 ;
U.S. Cl.
CPC ...
H01L 2/144 ; H01L 2/1336 ;
Abstract
Shorting between a transistor gate electrode and associated source/drain regions due to metal silicide formation on the sidewall spacers is prevented by passivating the sidewall spacer surfaces with a mixture of ozone and water. Embodiments of the invention include spraying the wafer with or immersing the wafer in, a saturated solution of ozone in water.