The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2002
Filed:
Dec. 06, 1999
Jong Kwan Kim, Chungcheongbuk-do, KR;
Hyundai Electronics Industries Co., Ltd., Kyoungki-Do, KR;
Abstract
Method for fabricating a semiconductor device, including the steps of (1) forming a gate insulating film, a silicon layer, and an insulating film on a substrate in succession, (2) selectively removing a portion of the insulating film on which a gate electrode is to be formed, (3) forming first sidewalls at sides of the insulating film having the portion removed therefrom, (4) forming silicide on a surface of the exposed silicon, (5) forming a cap insulating film on the silicide and the first sidewalls, (6) removing the insulating film, and (7) using the cap insulating film as a mask in removing the exposed silicon layer, to form the gate electrode.