The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2002
Filed:
Jun. 29, 1999
Applicant:
Inventors:
Se Aug Jang, Ichon, KR;
In Seok Yeo, Ichon, KR;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1336 ; H01L 2/1265 ; H01L 2/13205 ; H01L 2/144 ;
U.S. Cl.
CPC ...
H01L 2/1336 ; H01L 2/1265 ; H01L 2/13205 ; H01L 2/144 ;
Abstract
The present invention provides a method for fabricating an improved gate electrode of a MOSFET device. And the method for fabricating a MOSFET device having a polycide gate to which a titanium silicide is applied comprises the steps of sequentially forming a polysilicon layer on a gate insulating layer and a titanium layer in this order, forming a capping layer on the titanium layer and forming a titanium silicide layer by performing a rapid thermal process in nitrogen atmosphere.