The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2002
Filed:
Aug. 28, 2000
Wayne A. Bonin, North Oaks, MN (US);
Zine-Eddine Boutaghou, Vadnais Heights, MN (US);
Roger L. Hipwell, Jr., Eden Prairie, MN (US);
Barry D. Wissman, Eden Prairie, MN (US);
Lee Walter, Plymouth, MN (US);
Barbara J. Ihlow-Mahrer, Crystal, MN (US);
Seagate Technology LLC, Scotts Valley, CA (US);
Abstract
Utilizing reactive ion etching (RIE) lag, tethers are fabricated that reliably hold devices in place during processing and storage, yet are easily broken to remove the parts from the wafer as desired, without requiring excessive force that could damage the devices. The tethers are fabricated by slightly narrowing the periphery etch feature at several places. By adjusting the ratio of the main periphery width to the necked width at the tethers, the final thickness of the tether can be controlled to a small fraction of the wafer thickness, so that tethers defined by readily achievable feature sizes will reliably hold the parts in place until removal is desired. Since the tethers are now only a fraction of the wafer thickness, they will reliably break to release the part at a force level that will not damage the part.