The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2002
Filed:
Oct. 30, 2000
Satoru Muramatsu, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
The present invention relates to a method of manufacturing a non-volatile semiconductor device having a structure in which layers of a first insulating film, a first polysilicon layer, a second insulating film and a second polysilicon layer are formed, in this order, on a semiconductor substrate; which comprises the steps of forming the first insulating film on the semiconductor substrate and thereafter forming the first polysilicon layer; patterning the first polysilicon layer; performing a heat treatment in hydrogen atmosphere; forming the second insulating film; forming the second polysilicon layer; and patterning the second polysilicon layer. In accordance with the present invention, a non-volatile semiconductor device having excellent hold characteristics and only a small dispersion of element characteristics can be manufactured.