The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2002
Filed:
May. 24, 2001
Applicant:
Inventors:
Masatoshi Inaba, Tokyo, JP;
Takanao Suzuki, Tokyo, JP;
Tadanori Ominato, Tokyo, JP;
Masahiro Kaizu, Tokyo, JP;
Akihito Kurosaka, Tokyo, JP;
Assignee:
Fujikura Ltd., Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/144 ; H01L 2/148 ; H01L 2/150 ; H01L 2/14763 ; H01L 2/312 ; H01L 2/3053 ; H01L 2/314 ;
U.S. Cl.
CPC ...
H01L 2/144 ; H01L 2/148 ; H01L 2/150 ; H01L 2/14763 ; H01L 2/312 ; H01L 2/3053 ; H01L 2/314 ;
Abstract
An insulating layer ( ) is formed on a Si wafer ( ). An opening portion is made in this insulating layer ( ), and subsequently a rerouting layer ( ) is formed. Next, a resin layer ( ) is formed on the rerouting layer ( ). The resin layer ( ) is then cured so that the rerouting layer ( ) and a Cu foil ( ) are bonded to each other through the resin layer ( ). Thereafter, a ring-like opening portion ( ) is made in the resin layer ( ), and a Cu plating layer ( ) is formed inside this opening portion ( ).