The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2002
Filed:
May. 26, 2000
Applicant:
Inventors:
Kensaku Motoki, Hyogo, JP;
Masato Matsushima, Hyogo, JP;
Katsushi Akita, Hyogo, JP;
Mitsuru Shimazu, Hyogo, JP;
Kikurou Takemoto, Hyogo, JP;
Hisashi Seki, Tokyo, JP;
Akinori Koukitu, Tokyo, JP;
Assignee:
Sumitomo Electric Industries, LTD, Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/100 ;
U.S. Cl.
CPC ...
H01L 2/100 ;
Abstract
The present invention provides an epitaxial wafer comprising a (111) substrate of a semiconductor having cubic crystal structure, a first GaN layer having a thickness of 60 nanometers or more, a second GaN layer having a thickness of 0.1 &mgr;m or more and a method for preparing it.
Motoki, Kensaku. (2002). Methods for preparing an epitaxial wafer having a gallium nitride epitaxial layer deposited on a semiconductor substrate (U.S. Patent No. 6387722). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6387722
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile