The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2002
Filed:
Jul. 18, 2000
Samsung Electronics Co., Ltd., Suwon, KR;
Abstract
A phase shift mask formed by depositing on a transparent substrate a phase shifter material containing chromium (Cr), aluminum (Al), oxygen (O) and nitrogen (N). The transmissivity of a phase shifting layer of the phase shift mask, which is a CrAION layer, is increases, and the phase of exposure light is shifted by 180° at a predetermined thickness, so that a fine photoresist pattern can be formed. Also, the transmissivity of the phase shifting layer with respect to inspection light, which has a longer wavelength than exposure light, is relatively low, which permits accurate inspection of the mask. The phase shift mask can be useful in photolithography using a short wavelength of exposure light, and in an inspection apparatus using an inspection light source having a longer wavelength than exposure light.