The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2002
Filed:
Nov. 20, 2000
Applicant:
Inventors:
Assignee:
Primary Examiner:
Int. Cl.
CPC ...
C30B 1/322 ;
U.S. Cl.
CPC ...
C30B 1/322 ;
Abstract
A single crystal producing method for growing a single crystal, comprises the steps of: placing a material at one focal point in a light-condensing and heating furnace having an ellipse in section; placing a heat light source at another focal point; and emitting a laser beam has a wavelength of not less than about 160 nm and not greater than about 1,000 nm, on or near the one focal point to form a melt zone; and moving the melt zone to grow a single crystal.