The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 2002
Filed:
May. 08, 2000
Kazuo Fukagai, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A window type semiconductor layer light emitting device has a compound semiconductor structure including a first clad layer formed on a crystal plane closer to (100) plane, an active layer formed on the first clad layer and a second clad layer formed on the active layer and window layers grown on both sides of the compound semiconductor structure, and the buried window layers are epitaxially grown on the side surfaces of the compound semiconductor structure by restricting the epitaxial growth in a vertical direction to the crystal lane so that the upper surfaces of the buried window layers are substantially coplanar with the upper surface of the second clad layer, thereby decreasing the coupling loss.