The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 07, 2002

Filed:

Jan. 05, 1998
Applicant:
Inventors:

Takashi Inoue, Suwa, JP;

Yasushi Takano, Nagano-ken, JP;

Hideaki Naono, Suwa, JP;

Wataru Ito, Suwa, JP;

Tsutomu Asakawa, Suwa, JP;

Takeyoshi Ushiki, Suwa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/136 ;
U.S. Cl.
CPC ...
G02F 1/136 ;
Abstract

The present invention provides a MIM type non-linear element in which the capacitance is sufficiently small and in which little changes over time are exhibited in the current-voltage characteristics, a liquid crystal display panel with high image quality using the MIM type non-linear element, and a method of manufacturing the MIM type non-linear element. The MIM type non-linear element includes a first conductive film, an insulation film and a second conductive film, which are laminated on a substrate. The insulation film has a relative dielectric constant of 25.5 or less, preferably 24.0-25.5. In elementary analysis by SIMS, a hydrogen spectrum of the boundary region between the first conductive film and the insulation film has a width of 10 nm or more in the depth direction at an intensity of one tenth of the peak intensity. The first conductive film of the MIM type non-linear element shows a peak temperature of 300° C. or higher in a thermal desorption spectroscopy of hydrogen. The MIM type non-linear element is manufactured by, for example, a method containing the steps of (a) forming the first conductive film, (b) heat-treating the first conductive film at a temperature of 300° C. or higher in an inert gas, (c) forming the insulation film on the surface of the first conductive film by anodization of the first conductive film, and (d) forming the second conductive film on the surface of the insulation film.


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