The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 2002
Filed:
Oct. 15, 1999
Applicant:
Inventors:
Jeng Ping Lu, Mountain View, CA (US);
Ping Mei, Palo Alto, CA (US);
Francesco Lemmi, Menlo Park, CA (US);
Robert A. Street, Palo Alto, CA (US);
James B. Boyce, Los Altos, CA (US);
Assignee:
Xerox Corporation, Stamford, CT (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 3/1075 ; H01L 3/1105 ;
U.S. Cl.
CPC ...
H01L 3/1075 ; H01L 3/1105 ;
Abstract
A structure and method for suppressing lateral leakage current in full fill factor image arrays includes dual dielectric passivation layer. A first passivation layer includes a material that is an insulator, has a low dielectric constant to minimize capacitive coupling between the contacts, and is low stress to prevent cracking. A second passivation layer includes a thin oxide or nitride layer over the first passivation layer.