The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 2002
Filed:
Mar. 15, 2000
Applicant:
Inventors:
Toshiaki Sasaki, Kanagawa, JP;
Shinji Fujikake, Kanagawa, JP;
Assignee:
Fuji Electric & Co., Ltd., , JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 3/1075 ;
U.S. Cl.
CPC ...
H01L 3/1075 ;
Abstract
The film thickness of a p-type semiconductor was adjusted in order to achieve 0.85-0.99 times the maximum pre-irradiation open-circuit voltage. In order to achieve 0.85-0.99 times the maximum pre-irradiation open-circuit voltage, it was also shown to be favorable to control acceptor impurity levels in p-type semiconductors. Irradiation conditions of more than 10 hours at 1 SUN or (light intensity [SUN]) ×10 or more (time [h])>10 were utilized.