The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2002
Filed:
Feb. 25, 2000
Noriaki Kodama, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
There is provided a non-volatile semiconductor memory device, including (a) a first gate insulating film formed on a channel region of a semiconductor substrate, (b) a floating gate electrode formed on the first gate insulating film, (c) a second gate insulating film formed on the floating gate electrode, (d) a control gate electrode formed on the second gate insulating film, and (e) an electric power source applying a gradually increasing voltage across the control gate electrode and the semiconductor substrate, the electric power source varying both an increment by which the voltage is increased and a period of time during which the voltage is kept constant, while data is being rewritten. The non-volatile semiconductor memory device is capable of increasing a rate at which data stored therein is deleted, without deleting data more than necessary.