Magnetic element, magnetic read head, magnetic storage device, magnetic memory device

Abstract

The present invention provides a spin-dependent tunneling effect element expectable to offer the spin accumulation effect at room temperature while also providing a data storage or “memory” element and magnetic reading head each using the tunnel effect element A first concept of the present invention lies in provision of a magnetic element characterized by comprising first and second ferromagnetic layers and a layer of semiconductor particles neighboring the first ferromagnetic layer with a first tunnel barrier disposed between them and also neighboring the second ferromagnetic layer with a second tunnel barrier laid therebetween. A magnetic memory device is also provided which comprises a plurality of memory cells each including a spin-dependent tunneling effect element having a first ferromagnetic electrode, a second ferromagnetic electrode, and a gate electrode as inserted between the first and second ferromagnetic electrodes through first and second ferromagnetic layers; data lines connected in common to the first or second ferromagnetic electrode of multiple spin-dependent tunneling effect elements; and a plurality of word lines capacitance-coupled to the gate electrodes of different memory cells respectively, characterized in that cell selection of selecting one from among multiple memory cells as commonly connected to a data line during reading information stored therein is performed by letting one of the word lines change in potential and then changing the resistance value of a memory cell capacitance-coupled to such selected word line.