The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2002
Filed:
Jun. 23, 2000
Naoki Katoh, Kodaira, JP;
Kazuo Yano, Hino, JP;
Yohei Akita, Kokubunji, JP;
Mitsuru Hiraki, Kodaira, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
Disclosed is a semiconductor integrated circuit device constructed of MOSFETs in which there is attained a harmony between increase in consumption power due to a leakage current and operating speed of the MOSFETs in a suitable manner, and among a plurality of signal paths in the semiconductor integrated circuit device, a path which has a margin in delay is constructed with MOSFETs each with a high threshold voltage, while a path which has no margin in delay is constructed with MOSFETs each with a low threshold voltage which has a large leakage current but a high operating speed, in light of a delay with which a signal is transmitted along a signal path.