The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2002
Filed:
Apr. 25, 2000
Applicant:
Inventors:
Tomotaka Fujisawa, Tokyo, JP;
Chihiro Arai, Kanagawa, JP;
Assignee:
Sony Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 3/106 ; H01L 2/7082 ; H01L 2/7102 ; H01L 2/970 ; H01L 3/111 ;
U.S. Cl.
CPC ...
H01L 3/106 ; H01L 2/7082 ; H01L 2/7102 ; H01L 2/970 ; H01L 3/111 ;
Abstract
A semiconductor device in which a photoreceptor element and a semiconductor element are formed on a common semiconductor substrate, includes: a substrate of a first conductive type; and a semiconductor layer of a second conductive type formed on the substrate; wherein the photoreceptor element is composed of the substrate and the semiconductor layer; and an impurity concentration region of the first conductive type having an impurity concentration higher than that of the substrate is provided at a position under the semiconductor layer in a region where the semiconductor element is to be formed.