The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2002
Filed:
Mar. 29, 1999
James H. Ermer, Burbank, CA (US);
Li Cai, Northridge, CA (US);
Moran Haddad, Winnetka, CA (US);
Bruce T. Cavicchi, North Hollywood, CA (US);
Nasser H. Karam, Northridge, CA (US);
Hughes Electronics Corporation, El Segundo, CA (US);
Abstract
A multilayer semiconductor structure includes a germanium substrate having a first surface. The germanium substrate has two regions, a bulk p-type germanium region, and a phosphorus-doped n-type germanium region adjacent to the first surface. A layer of a phosphide material overlies and contacts the first surface of the germanium substrate. A layer of gallium arsenide overlies and contacts the layer of the phosphide material, and electrical contacts may be added to form a solar cell. Additional photovoltaic junctions may be added to form multijunction solar cells. The solar cells may be assembled together to form solar panels.