The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2002
Filed:
Nov. 25, 1998
Michael Tooher, Stuttgart, DE;
Stefano Tonello, Breganze, IT;
STMicroelectronics S.r.l., Agrate Brianza, IT;
Abstract
A semiconductor memory cell that includes a word line, two bit lines, a precharge line, and two cross-coupled inverters. Each of the inverters is formed by a P-channel transistor and an N-channel transistor. Additionally, a first access transistor selectively couples one bit line to the output of one inverter, and a second access transistor selectively couples the other bit line to the output of the other inverter. One terminal of the N-channel transistor of each of the inverters is connected to the precharge line. In a preferred embodiment, the access transistors are P-channel transistors and the gate terminal of each PMOS access transistor is connected to the word line. Additionally, the present invention provides a method of writing data to a semiconductor memory cell that is connected to a pair of bit lines.