The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 30, 2002

Filed:

Aug. 16, 2000
Applicant:
Inventors:

Tzer-Perng Chen, Hsinchu, TW;

Rong-Yih Hwang, Hsinchu, TW;

Charng-Shyang Jong, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 3/300 ;
U.S. Cl.
CPC ...
H01L 3/300 ;
Abstract

A semiconductor light emitting device has a transparent substrate, an n-type semiconductor layer, a p-type semiconductor layer, an n-type transparent electrode, a p-type transparent electrode, an n-type bonding pad, and a p-type bonding pad. The n-type semiconductor layer is disposed over the transparent substrate. The p-type semiconductor layer and the n-type transparent electrode are provided on the n-type semiconductor layer and arranged alternatively to each other, where the p-type semiconductor layer and the n-type transparent electrode cover different portions of the n-type semiconductor layer respectively. The p-type transparent electrode is provided in contact with the p-type semiconductor layer. The n-type and p-type bonding pads are disposed on the n-type and p-type transparent electrodes respectively, and the areas of these bonding pads are smaller than the area of the corresponding electrodes.


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