The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2002
Filed:
May. 28, 1999
Adele E. Schmitz, Newbury Park, CA (US);
Robert H. Walden, Newbury Park, CA (US);
Mark Lui, Los Angeles, CA (US);
Mark K. Yu, Thousand Oaks, CA (US);
HRL Laboratories, LLC, Malibu, CA (US);
Abstract
A Schottky diode, and a method of making the same, which is fabricated on InP material and employs a Schottky layer including In Al As with x>0.6, or else including a chirped graded supperlattice in which successive periods of the superlattice contain progressively less GaInAs and progressively more AlInAs, the increase in AlInAs being terminated before the proportion of AlInAs within the last period (adjacent the anode metal) exceeds 80%. Such fabrication creates an InP-based Schottky diode having a low turn-on voltage which may be predictably set within a range by adjusting the fabrication parameters.