The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2002
Filed:
May. 10, 2000
Michal Edith Gross, Summit, NJ (US);
Agere Systems Guardian Corp., Orlando, FL (US);
Abstract
A process for fabricating a semiconductor device with copper interconnects is disclosed. In the process of the present invention, a layer of dielectric material is formed on a substrate. A barrier layer to prevent copper diffusion is then deposited over the entire surface of the substrate. A dual copper layer is formed on the barrier layer. The dual layer has a copper layer deposited by PVD and a copper layer deposited by electroplating. The copper layers are adjacent to each other. The ratio of the thickness (X) of the electroplated, layer to the thickness of the PVD layer (Y) is about 1:0.5 to about 1:2. The thickness of the electroplated layer is at least about 3 &mgr;m. The thickness of the PVD copper layer is at least about 100 nm. The thickness of the two layers is selected to effect recrystallization of the electroplated copper from a small grain size (0.1 &mgr;m to 0.2 &mgr;m) to a large grain size (1 &mgr;m or greater).