The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2002
Filed:
Jul. 05, 2000
Applicant:
Inventors:
Takehiko Hamada, Tokyo, JP;
Masayuki Hamada, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/146 ; H01L 2/178 ; H01L 2/3544 ;
U.S. Cl.
CPC ...
H01L 2/146 ; H01L 2/178 ; H01L 2/3544 ;
Abstract
A method of manufacturing a semiconductor device, in which a contact alignment mark ( A) is formed in an interlayer insulating film ( ), and a wiring alignment mark ( A) is formed above a gate alignment mark ( A) so that the size of the wiring alignment mark ( A) is slightly larger than the gate alignment mark ( A). At the same time, all the other alignment marks at the lower side are shielded by a shield film ( S). Opaque alignment mark and opaque shield film are formed to shield all the alignment marks at the lower side, whereby the alignment marks can be successively formed while stacked on one another.