The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2002
Filed:
Apr. 20, 2000
Applicant:
Inventor:
Jonathan P Lotz, Ft Collins, CO (US);
Assignee:
Hewlett-Packard Company, Palo Alto, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/18249 ;
U.S. Cl.
CPC ...
H01L 2/18249 ;
Abstract
The present invention creates a useful BJT by increasing the gain associated with the parasitic BJT on an SOI or bulk type MOSFET. This is done by masking those manufacturing steps that minimize the BJT's beta value, by intentionally increasing the beta value of the BJT, and by driving the base of the BJT with the circuit. Once the gain is increased sufficiently, the BJT may be used productively in the circuit. Because the physical structure of the BJT is already part of the silicon water, its productive use does not require additional space.