The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2002
Filed:
Mar. 15, 2000
Shinji Tanabe, Tokyo, JP;
Oki Electric Industry Co., Ltd., Tokyo, JP;
Abstract
A method of manufacturing a semiconductor device in which potential can be applied well to a substrate without the semiconductor device being made less compact. A wafer A includes a semiconductor layer a surface oxide film and electrode pads for the substrate. The semiconductor layer is formed on the wafer A via an insulating layer and a plurality of same semiconductor circuits are formed collectively at the semiconductor layer The surface oxide film covers the semiconductor layer The electrode pads for the substrate are formed on the surface oxide film in correspondence with the semiconductor circuits. Cut grooves for separating the wafer A into chips of the semiconductor circuits are formed in the wafer A from the surface oxide film to the substrate. Before the wafer A is separated into the chips a conductive layer is formed. The conductive layer is formed from a substrate region of cut groove surfaces and via the cut groove surfaces and and reaches the electrode pads