The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2002
Filed:
Sep. 24, 1996
Applicant:
Inventors:
Masafumi Sano, Kyoto-fu, JP;
Keishi Saito, Nara, JP;
Assignee:
Canon Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/100 ;
U.S. Cl.
CPC ...
H01L 2/100 ;
Abstract
Disclosed is a method for manufacturing a photovoltaic element wherein a pin-structure formed by laminating n-, i- and p-type semiconductor layers, each of which contains silicon atoms and has a non-monocrystalline crystal structure is formed at least one or more times on a substrate, the method comprising steps of forming each of the semiconductor layers and annealing the surface of at least one of the semiconductor layers or the substrate in an atmosphere of hydrogen gas, helium gas or argon gas that contains 1 to 1000 ppm of oxygen atom containing gas.