The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2002
Filed:
Mar. 18, 1998
Applicant:
Inventors:
Toshiaki Tanaka, Kodaira, JP;
Shigeru Aoki, Fujimi, JP;
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/20 ; H01L 2/1205 ; H01L 2/904 ;
U.S. Cl.
CPC ...
H01S 5/20 ; H01L 2/1205 ; H01L 2/904 ;
Abstract
An insulating member ( ) of an amorphous structure partially opened to expose a substrate ( ) is formed on the substrate. At least a compound semiconductor ( ) containing at least nitrogen as a constituent element is deposited on the insulating member ( ) and the substrate ( ) exposed by the opening thereby to form a semiconductor material ( ). A semiconductor material ( ) configured of the first semiconductor material or configured of the first semiconductor material and another semiconductor material grown on the first semiconductor material is processed thereby to form a semiconductor device.