The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2002
Filed:
Jun. 06, 2000
Applicant:
Inventor:
Satoshi Sakurai, San Jose, CA (US);
Assignee:
National Semiconductor Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G05F 1/10 ;
U.S. Cl.
CPC ...
G05F 1/10 ;
Abstract
A current generator circuit having an output current with a stable absolute magnitude and which is proportional to a temperature of about T Kelvin. An MOS transistor operating in the linear region produces a drain-source current related to the output current and is biased with a drain-source voltage related to the difference between the base-emitter voltage of a pair of bipolar transistors operating at different current densities. The temperature coefficient of the output current is ideal for biasing an amplifier circuit so as to maintain a minimum settling time over a specified temperature range.