The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2002
Filed:
Feb. 04, 2000
Nippon Pillar Packing Co., Ltd., Osaka, JP;
Abstract
In single crystal SiC , growing single crystal SiC is integrally formed on a surface of a single crystal hexagonal (6H type) &agr;-SiC substrate used as a seed crystal. The number of micropipes A of the growing single crystal SiC is less than that of the micropipes B of the single crystal &agr;-SiC substrate , and the thickness t thereof is less than the thickness t of the single crystal &agr;-SiC substrate , thereby making it possible to obtain the high quality-single crystal SiC wherein the number of the micropipes per unit area is less, thereby decreasing the distortion in the neighborhood of the micropipes. This can provide the high-quality single crystal SiC which can be practically used as a substrate wafer for fabricating a semiconductor device.