The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 23, 2002

Filed:

May. 19, 1999
Applicant:
Inventors:

Takashi Yamada, Ebina, JP;

Hideaki Nii, Kawasaki, JP;

Makoto Yoshimi, Tokyo-To, JP;

Tomoaki Shino, Tokyo-To, JP;

Kazumi Inoh, Yokohama, JP;

Shigeru Kawanaka, Yokohama, JP;

Tsuneaki Fuse, Tokyo-To, JP;

Sadayuki Yoshitomi, Tokyo-To, JP;

Assignee:

Kabushiki Kaisha Toshiba, Kawasaki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/900 ; H01L 2/7082 ; H01L 2/7102 ; H01L 2/970 ; H01L 2/701 ;
U.S. Cl.
CPC ...
H01L 2/900 ; H01L 2/7082 ; H01L 2/7102 ; H01L 2/970 ; H01L 2/701 ;
Abstract

In a bipolar transistor improved to exhibit an excellent high-frequency property by decreasing the width of the intrinsic base with without increasing the base resistance, an emitter region, intrinsic base region and collector region are closely aligned on an insulating layer, and the intrinsic base region and the collector region make a protrusion projecting upward from the substrate surface. The protrusion has a width wider than the width of the intrinsic base region.


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