The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2002
Filed:
Sep. 08, 2000
John H. Carpenter, Jr., Rowlett, TX (US);
Joseph A. Devore, Richardson, TX (US);
Toru Tanaka, Dallas, TX (US);
Ross E. Teggatz, McKinney, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A high-breakdown voltage transistor ( ′) is disclosed. The transistor ( ′) is formed into a well arrangement in which a shallow, heavily doped, well ( ) is disposed at least partially within a deeper, more lightly-doped well ( ), both formed into an epitaxial layer ( ) of the substrate ( ). The deep well ( ) is also used, by itself, for the formation of high-voltage transistors, while the shallower well ( ) is used by itself in low-voltage, high-performance transistors. This construction permits the use of high-performance, and precisely matching, transistors in high bias voltage applications, without fear of body-to-substrate (or “back-gate-to-substrate”) junction breakdown.