The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 23, 2002

Filed:

Aug. 30, 1999
Applicant:
Inventor:

Tetsuya Oshino, Kawasaki, JP;

Assignee:

Nikon Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 3/709 ; H01L 2/1027 ;
U.S. Cl.
CPC ...
H01J 3/709 ; H01L 2/1027 ;
Abstract

A charged particle beam exposure apparatus mask is provided such that, even if an internal tensile stress is applied to the mask, the amount of deformation of the circuit pattern remains within a range in which the transfer accuracy remains satisfactory. In the case a pattern is placed on a square membrane , when the side length of the square membrane is denoted by L, and the magnitude of the internal tensile stress of the square membrane is denoted by &sgr;(MPa), it has been discovered that the deformation amount of the circuit pattern is proportional to &sgr;×L. As a result of a computation, it has been discovered that the relation between the internal tensile stress &sgr;(MPa) and the side length L of the square membrane needs to satisfy &sgr;×L≦13 in order to keep the position distortion of the circuit pattern less than 28 nm, below which no problem arises in performing an exposure-transfer.


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