The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2002
Filed:
Nov. 24, 1999
Takao Kinoshita, Kasaoka, JP;
Masato Kobayashi, Kawasaki, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A method of fabricating a semiconductor device first involves forming a conductive layer made of copper or its alloy as a principal component on a semiconductor substrate. Then, forming an insulating layer on the conductive layer. Next, forming an opening in the insulating layer with use of a resist pattern as a mask so as to reach the conductive layer; subjecting the resulting semiconductor substrate to an oxidizing/ashing treatment in an oxygen plasma atmosphere to remove the resist pattern and to oxidize at least an inner surface of the opening and finally, washing at least the inner surface of the opening with a solution containing citric acid as a principal component at normal temperature.