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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 6376324 B1

PDFFull Text
Date of Patent:
Apr. 23, 2002

Filed:

Jun. 23, 2000

Collar process for reduced deep trench edge bias

Applicant:
Inventors:

Jack A. Mandelman, Stormville, NY (US);

Ramachandra Divakaruni, Somers, NY (US);

Carl J. Radens, LaGrangeville, NY (US);

Ulrike Gruening, Munich, DE;

Akira Sudo, Poughkeepsie, NY (US);

Assignee:

International Business Machines Corporation, Armonk, NY (US);

Attorney:

Ira D. Blecker

Primary Examiner:

David Nelms

Assistant Examiner:

Dung A Lee

Int. Cl.
CPC ...
H01L 2/120 ;
U.S. Cl.
CPC ...
H01L 2/120 ;
Abstract

Disclosed is a method to provide a new deep trench collar process which reduces encroachment of strap diffusion upon array metal oxide semiconductor field effect transistors (MOSFET's) in semiconductor devices. The invention allows a reduced effective deep trench edge bias at the top of the deep trench, without compromising storage capacitance, by maximizing the distance between the MOSFET gate conductor and the deep trench storage capacitor.

Find Patent Forward Citations

Mandelman, Jack. (2002). Collar process for reduced deep trench edge bias (U.S. Patent No. 6376324). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6376324

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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