The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2002
Filed:
Jun. 30, 2000
Jung Ho Lee, Seoul, KR;
Seung Chul Lee, Kyungki-do, KR;
Hyundai Electronics Industries Co., Ltd., Kyungki-do, KR;
Abstract
There is disclosed a method of manufacturing a semiconductor device ion by which an epitaxial growth film into which boron is doped in-situ is formed before a gate oxide film is formed after formation a well region for forming a MOS device and using it as a channel threshold voltage control layer, thus forming a counter-doped boron layer having an uniform and still higher concentration than the threshold voltage control layer formed by the conventional ion implantation process at the surface of the silicon substrate. As a result, it can make a device having a more sharp profile of the threshold voltage profile at the channel and having an improved short channel characteristic by the combination of the channel and junction engineering.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile