Fabrication method of nonvolatile memory device

Abstract

The method of fabricating a nonvolatile memory device having improved reliability and characteristics includes the step of forming a second conductivity type transistor in a peri (peripheral) region of a first conductivity type semiconductor substrate. Then a first insulation film is formed on the peri region. Afterwards the method includes the steps of forming a plurality of separated first floating gates on a cell region of the substrate with a gate insulation film therebetween, forming a second insulation film having contact holes over the substrate so as to expose a portion of each first floating gates, forming a second floating gate in each contact hole and on the second insulation film, stacking a control gate and a cap insulation film in sequence on the second floating gate with a third insulation film therebetween, forming a fourth insulation film sidewall on each side of the control gate and the cap insulation film, forming a tunneling insulation film on an exposed portion of the second floating gate, and forming an erase gate on the tunneling insulation film between two adjacent control gates.