The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2002
Filed:
Oct. 06, 2000
Jae Kap Kim, Kyoungki-do, KR;
Dongbu Electronics Co., Ltd., Seoul, KR;
Abstract
A method for fabricating NOR type memory cells of a nonvolatile memory device, floating gate insulating film, a floating gate electrode, a control gate insulating film, a control gate electrode, and an insulating film sequentially stacked in the shape of pattern on each of memory cell regions of a semiconductor substrate defined by an isolation film are formed; a source electrode and a drain electrode are formed in portions of the semiconductor substrate exposed at both sides of the gate electrode, a first etching barrier film is formed on the resultant; a first interlayer insulating film is formed on the first etching barrier film in a planarized fashion; a desired portion of the first interlayer insulating film is etched to form a first contact hole exposing the source and drain electrodes; a first conductive film in a planarized fashion is formed on the resultant to bury the first contact hole; the first conductive film is etched to form a source electrode line contacting the source electrode and a contact plug contacting the drain electrode; a second etching barrier film is formed on the resultant; a second interlayer insulating film is formed in a planarized fashion on the second etching barrier film; a desired portion of the second insulating film is etched to form second contact hole exposing the contact plug; and a bit line connected to the contact plug is formed via the second contact hole on the second interlayer insulating film.