The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2002
Filed:
Dec. 10, 1999
Elio Colabella, Milan, IT;
Emilio Camerlenghi, Bergamo, IT;
STMicroelectronics S.r.l., Agrate Brianza, IT;
Abstract
An improved method of making semiconductor memory structures that include a memory matrix having non-volatile memory cells, each with a floating gate transistor and a selection transistor, each transistor provided with a gate electrode. Associated with the memory matrix is control circuitry, which also have control gates. The method includes forming the gate electrodes on top of the semiconductor substrate and then depositing a dielectric layer over the whole memory structure. A screening layer is deposited over the whole surface of the memory structure, and then part of it is removed, exposing a portion of the control circuitry. A portion of the dielectric layer is etched away in the non-covered portion of the control circuitry to form spacer regions, and the non-covered portion of the control circuitry is then implanted with a dopant.