The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 23, 2002

Filed:

Jun. 30, 2000
Applicant:
Inventors:

Kwang Chul Joo, Kyoungki-do, KR;

Kee Jeung Lee, Seoul, KR;

Il Keoun Han, Kyoungki-do, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/18242 ;
U.S. Cl.
CPC ...
H01L 2/18242 ;
Abstract

Disclosed are a capacitor for a semiconductor memory device and a method of manufacturing the same. According to the present invention, the method includes the steps of: forming a lower electrode on a semiconductor substrate; nitride-treating the surface of the lower electrode so as to prevent a natural oxide layer from generating on the surface thereof; forming a Ta O layer as a dielectric layer on the upper part of the lower electrode; forming a conductive barrier made of the silicon nitride layer on the upper part of the Ta O layer; and forming an upper electrode on the upper part of the conductive barrier.


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