The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2002
Filed:
Jun. 06, 2000
Applicant:
Inventors:
Aaron Eugene Bond, Macungie, PA (US);
Abdallah Ougazzaden, Emmaus, PA (US);
Gleb E. Shtengel, Baltimore, MD (US);
Assignee:
Lucent Technologies, Inc., Murray Hill, NJ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/100 ; H01S 5/00 ; G02B 6/10 ;
U.S. Cl.
CPC ...
H01L 2/100 ; H01S 5/00 ; G02B 6/10 ;
Abstract
A semiconductor waveguide device and method for forming the same provide an InAlAs film as an etch stop layer. The InAlAs film does not etch in the CH /H etch chemistry used to produce the device using reactive ion etching techniques. The etching process etches the waveguide layer and cladding layer or layers formed above the InAlAs layer, and exposes the InAlAs etch stop film to produce a waveguide device having desired physical characteristics.