The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 2002
Filed:
Dec. 13, 2000
Norio Hosoi, Yokohama, JP;
Hiroyuki Abe, Chigasaki, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
There is disclosed a bias circuit of a bipolar transistor for the high frequency power amplification, and the bias circuit comprises a bipolar transistor for the temperature compensation, a resistor for the temperature compensation connected to a collector thereof, a field effect transistor, and a source resistor connected to a source thereof. The bias circuit comprises a two stage transistor circuit in which a connection point between the bipolar transistor and the resistor for the temperature compensation is connected to a gate of the field effect transistor, and an output voltage is taken out from a connection point between the source of the field effect transistor and the source resistor. In this bias circuit, the thermal runaway resulting from a temperature rise can be prevented, and a large high frequency output can be obtained in a non-linear operation region of the high frequency input power—output power characteristic.