The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 2002
Filed:
Jan. 19, 2001
David Vaclav Horak, Essex Junction, VT (US);
Rick Lawrence Mohler, Willison, VT (US);
Gorden Seth Starkey, Jr., Essex Junction, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A memory cell which comprises a substrate having a top surface; a capacitor extending vertically into the substrate for storing a voltage representing a datum, said capacitor occupying a geometrically shaped horizontal area; a transistor formed above the capacitor and occupying a horizontal area substantially equal to the geometrically shaped horizontal area, and having a vertical device depth, for establishing an electrical connection with the capacitor, in response to a control signal, for reading from, and writing to, the capacitor, wherein the transistor includes a gate formed near the periphery of said horizontal device area and having a vertical depth approximately equal to the vertical device depth; an oxide layer on an inside surface of the gate; a conductive body formed inside the oxide layer, said conductive body having a top surface and a bottom surface and a vertical depth approximately equal to the vertical device depth; and diffusion regions in the body near the top and bottom surfaces and a method of manufacturing the same is provided.