The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 2002
Filed:
Apr. 10, 1996
Applicant:
Inventors:
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/980 ;
U.S. Cl.
CPC ...
H01L 2/980 ;
Abstract
A field effect transistor includes (a) a semi-insulating GaAs substrate, (b) a step-doped structured active layer including an n type GaAs layer deposited on the substrate, and an n type GaAs layer or a non-doped GaAs layer deposited on the n type GaAs layer, the n type GaAs layer or non-doped GaAs layer being formed with at least one recess, and (c) a gate electrode formed in the recess so that the gate electrode is oriented in such a direction that drain current runs in the active layer along crystal orientation [01(−1)]. The field effect transistor enhances linearity of transfer conductance, and further improves strain characteristic.