The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 2002
Filed:
Dec. 14, 1999
Applicant:
Inventors:
Andrew Lu, Beacon, NY (US);
Juan Alexander Chediak, Berkeley, CA (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1302 ;
U.S. Cl.
CPC ...
H01L 2/1302 ;
Abstract
A method of forming a dual damascene pattern in a dielectric, includes etching a pattern of lines minus vias overlapping the lines to a line depth, leaving the dielectric unetched at the via locations; while the vias are etched in a separate step, starting from the top surface of the dielectric and continuing to a via depth greater than the line depth.