The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 2002
Filed:
Sep. 28, 2000
Samsung Electronics Co., Ltd., Suwon, KR;
Abstract
A method of manufacturing an electrical interconnection of a semiconductor device produces an erosion protecting plug in a contact hole to protect a selected portion of an interlayer dielectric layer when the interlayer dielectric layer is being etched to form a recess for a conductive line. The contact hole is formed in the interlayer dielectric layer. The contact hole is filled with an organic material to form the erosion protecting plug. The organic material is a photoresist material or an organic polymer. A photoresist pattern is formed for exposing the erosion protecting plug and a portion of the interlayer dielectric layer adjacent to the erosion protecting plug. A recess which extends down to the contact hole is formed by etching the portion of the interlayer dielectric layer which is exposed by the photoresist pattern. The erosion protecting plug and the photoresist pattern are then removed. A conductive line filling the recess and a contact filling the contact hole are then formed.