Fabrication method of submicron gate using anisotropic etching

Abstract

Disclosed is a method for fabricating a self-aligned submicron gate electrode using an anisotropic etching process. The method involves the steps of laminating a dummy emitter defining a dummy emitter region over a heterojunction bipolar transistor structure including layers sequentially formed over a semiconductor substrate to define a base region, an emitter region, and an emitter cap region, respectively, defining a line having a width of about 1 micron on the dummy emitter by use of a photoresist while using a contact aligner, selectively anisotropic etching the dummy emitter at a region where the line is defined, to allow the dummy emitter to have an etched portion having a bottom surface with a width less than the width of the line defined by the photoresist, and depositing a contact metal on the etched portion of the dummy emitter, thereby forming a gate. In accordance with the present invention, a reliable submicron gate can be fabricated using a simple anisotropic wet etch process and an inexpensive contact aligner. Accordingly, the manufacturing costs can be reduced. In the formation of a base electrode involved in the fabrication of an HBT device, the present invention also provides an effect of reducing the distance between a base and an emitter, thereby achieving a reduction in base resistance, by virtue of a self-alignment using a V-shaped submicron gate.