The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 2002
Filed:
Jun. 28, 2000
Jeong Kug Lee, Seoul, KR;
Jong Phil Kim, Kyoungki-do, KR;
Hyundai Electronics Industries Co., Ltd., Kyoungki-do, KR;
Abstract
The present invention discloses a method for fabricating a capacitor of a semiconductor device. In the conventional art, a bit line may be shifted or bent differently from the definition on a mask due to the stress resulting from a material difference between the bit line and BPSG film. However, in the present invention, the bit line is formed after depositing an oxide material on a contact plug, thereby preventing the shift or bending phenomenon and the short phenomenon between the metal interconnection contact and bit line. As a result, an open area is obtained during the formation step of a storage electrode, the insulating property between the bit line and storage electrode improves during the self aligned contact (SAC) etching step for forming a storage electrode contact hole, and the high speed and high integration of the semiconductor device are achieved by obtaining a sensing margin of the semiconductor device due to the capacitance reduction of the bit line, thereby enhancing a process yield and properties of the semiconductor device.