The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 2002
Filed:
Dec. 22, 2000
Jae Kap Kim, Kyoungki-do, KR;
Dongbu Electronics Co., Ltd., Seoul, KR;
Abstract
Provided is a method of manufacturing a semiconductor device having a stacked capacitor configured to reduce a step difference between a memory cell region and a logic circuit region adjacent thereto. In the method of manufacturing a semiconductor device, a sacrificial film removed after formation of the semiconductor device having a stacked capacitor, is preserved in the logic circuit region to be used as an interlayer insulating film. Thus, a step difference between a memory cell region having the capacitor and a logic circuit region, is removed, thereby facilitating formation of multi-layered interconnection wirings formed after forming the capacitor, and attaining fineness of the interconnection wirings.