The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 2002
Filed:
Jul. 22, 1999
Applicant:
Inventors:
Hideomi Suzawa, Kanagawa, JP;
Tomohiko Sato, Kanagawa, JP;
Yoshihiro Kusuyama, Kanagawa, JP;
Koji Ono, Kanagawa, JP;
Assignee:
Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/100 ; H01L 2/166 ; H01L 2/1302 ; H01L 2/13065 ;
U.S. Cl.
CPC ...
H01L 2/100 ; H01L 2/166 ; H01L 2/1302 ; H01L 2/13065 ;
Abstract
An etching method and a device therefor are provided to detect the etching end point with high accuracy and reproducibility. In an etching method and device, in dry etching, a variation of a self-bias voltage as a time elapses is measured, and a time where a differentiation value becomes 0 when the variation of the self-bias voltage is differentiated is regarded as an end point.